{"title":"铜-聚酰亚胺薄膜-硅多芯片模块封装技术的热分析与建模","authors":"D. W. Snyder","doi":"10.1109/STHERM.1992.172857","DOIUrl":null,"url":null,"abstract":"The author describes the use of experimentation and finite element modeling to investigate the thermal performance of a copper-polyimide thin-film-on-silicon technology. A thermal test module having a large number of internal and external temperature sensors was used to assess temperature gradients across the die, solder bumps, polyimide, and silicon substrate. Issues related to solder bump and via geometry solder bump arrangement, heat spreading in the silicon substrate and heat transfer to the next packaging level are considered to provide an understanding of heat transfer limitations from the active side of flip-chip devices in thin-film-on-silicon multi-chip modules.<<ETX>>","PeriodicalId":301455,"journal":{"name":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Thermal analysis and modelling of a copper-polyimide thin-film-on-silicon multichip module packaging technology\",\"authors\":\"D. W. Snyder\",\"doi\":\"10.1109/STHERM.1992.172857\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author describes the use of experimentation and finite element modeling to investigate the thermal performance of a copper-polyimide thin-film-on-silicon technology. A thermal test module having a large number of internal and external temperature sensors was used to assess temperature gradients across the die, solder bumps, polyimide, and silicon substrate. Issues related to solder bump and via geometry solder bump arrangement, heat spreading in the silicon substrate and heat transfer to the next packaging level are considered to provide an understanding of heat transfer limitations from the active side of flip-chip devices in thin-film-on-silicon multi-chip modules.<<ETX>>\",\"PeriodicalId\":301455,\"journal\":{\"name\":\"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-02-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.1992.172857\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1992 Proceedings] Eighth Annual IEEE Semiconductor Thermal Measurement and Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.1992.172857","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal analysis and modelling of a copper-polyimide thin-film-on-silicon multichip module packaging technology
The author describes the use of experimentation and finite element modeling to investigate the thermal performance of a copper-polyimide thin-film-on-silicon technology. A thermal test module having a large number of internal and external temperature sensors was used to assess temperature gradients across the die, solder bumps, polyimide, and silicon substrate. Issues related to solder bump and via geometry solder bump arrangement, heat spreading in the silicon substrate and heat transfer to the next packaging level are considered to provide an understanding of heat transfer limitations from the active side of flip-chip devices in thin-film-on-silicon multi-chip modules.<>