{"title":"VLSI电路静电放电保护调试的新方法","authors":"S. Sofer, Y. Fefer, M. Borenshtein, Y. Shapira","doi":"10.1109/IPFA.2006.251043","DOIUrl":null,"url":null,"abstract":"A proposed method for failure analysis and debugging of electrostatic discharge protection in VLSI circuits is presented, based on low-energy non-destructive emulation of real ESD stress. It allows on-die current and voltage measurements during stress, providing a direct and clear conclusion about the proper functioning of the protection method, or a reason for failure","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"98 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Novel method for debug of electrostatic discharge protection in VLSI circuits\",\"authors\":\"S. Sofer, Y. Fefer, M. Borenshtein, Y. Shapira\",\"doi\":\"10.1109/IPFA.2006.251043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A proposed method for failure analysis and debugging of electrostatic discharge protection in VLSI circuits is presented, based on low-energy non-destructive emulation of real ESD stress. It allows on-die current and voltage measurements during stress, providing a direct and clear conclusion about the proper functioning of the protection method, or a reason for failure\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"98 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel method for debug of electrostatic discharge protection in VLSI circuits
A proposed method for failure analysis and debugging of electrostatic discharge protection in VLSI circuits is presented, based on low-energy non-destructive emulation of real ESD stress. It allows on-die current and voltage measurements during stress, providing a direct and clear conclusion about the proper functioning of the protection method, or a reason for failure