片上系统衬底耦合的建模技术

N. Masoumi, M. Elmasry, S. Safavi-Naeini
{"title":"片上系统衬底耦合的建模技术","authors":"N. Masoumi, M. Elmasry, S. Safavi-Naeini","doi":"10.1109/ICM.2001.997480","DOIUrl":null,"url":null,"abstract":"The demand for integrating systems on a chip functioning at high frequencies, while utilizing the recent advances of submicron IC technologies, has cost IC designers the severe problem of on-chip-crosstalk, particularly substrate coupling. This paper presents three methods for efficient modeling of substrate coupling. We develop a boundary-element method based on Green's theorem for modeling using a rapid Green's function. In addition, closed-form formulas for fast extraction of substrate parasitics in low-dense chips (disperse devices) are derived. We apply the modeling method to analysis of substrate coupling in a large RF-IC.","PeriodicalId":360389,"journal":{"name":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","volume":"136 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Modeling techniques for substrate coupling for system-on-a-chip\",\"authors\":\"N. Masoumi, M. Elmasry, S. Safavi-Naeini\",\"doi\":\"10.1109/ICM.2001.997480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The demand for integrating systems on a chip functioning at high frequencies, while utilizing the recent advances of submicron IC technologies, has cost IC designers the severe problem of on-chip-crosstalk, particularly substrate coupling. This paper presents three methods for efficient modeling of substrate coupling. We develop a boundary-element method based on Green's theorem for modeling using a rapid Green's function. In addition, closed-form formulas for fast extraction of substrate parasitics in low-dense chips (disperse devices) are derived. We apply the modeling method to analysis of substrate coupling in a large RF-IC.\",\"PeriodicalId\":360389,\"journal\":{\"name\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"volume\":\"136 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2001.997480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2001.997480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在利用亚微米集成电路技术的最新进展的同时,对在芯片上集成高频功能的系统的需求,使集成电路设计者面临片上串扰的严重问题,特别是衬底耦合。本文提出了三种有效的基材耦合建模方法。本文提出了一种基于格林定理的边界元方法,用于快速格林函数的建模。此外,还推导了低密度芯片(分散器件)中衬底寄生物快速提取的封闭公式。我们将建模方法应用于大型射频集成电路中衬底耦合的分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling techniques for substrate coupling for system-on-a-chip
The demand for integrating systems on a chip functioning at high frequencies, while utilizing the recent advances of submicron IC technologies, has cost IC designers the severe problem of on-chip-crosstalk, particularly substrate coupling. This paper presents three methods for efficient modeling of substrate coupling. We develop a boundary-element method based on Green's theorem for modeling using a rapid Green's function. In addition, closed-form formulas for fast extraction of substrate parasitics in low-dense chips (disperse devices) are derived. We apply the modeling method to analysis of substrate coupling in a large RF-IC.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信