{"title":"电阻式开关存储器的设置和复位操作期间的电流超调","authors":"An Chen","doi":"10.1109/IRPS.2012.6241919","DOIUrl":null,"url":null,"abstract":"Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"355 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Current overshoot during set and reset operations of resistive switching memories\",\"authors\":\"An Chen\",\"doi\":\"10.1109/IRPS.2012.6241919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"355 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current overshoot during set and reset operations of resistive switching memories
Low switching current is required for low-power operation of resistive switching memories. Current overshoot during set switching is caused by parasitic capacitance, which may be minimized by effective switching control and reduction of parasitic effects. A different form of current overshoot is also observed during reset switching, where devices go through a transient resistance-reduction process before the reset switching occurs. Reset current overshoot increases actual reset power. Current overshoot has significant impact on the reliability and switching power of resistive switching memories.