表面清洗对Cu - Damascene互连消除应力和电迁移的影响

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369993

Jen-Pan Wang, Y. Su, J.F. Chen

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引用次数: 1

摘要

研究了铜表面清洁工艺对铜双大马士革金属化过程中应力消除和电迁移的影响。为了改善Cu的应力诱导空化(SIV)和电迁移(EM)，开发了一种优良的Cu预清洗工艺条件。较高的预清洁偏置功率和较短的预清洁时间，具有显著的低通孔电阻和优异的铜可靠性性能。

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Influence of Surface Cleaning on Stressvoiding and Electromigration of Cu Damascene Interconnection

This paper is to study the influence of Cu surface clean process on stressvoiding and electromigration of Cu dual damascene metallization. A superior Cu pre-cleaning process condition is developed to improve Cu stress-induced voiding (SIV) and electromigration (EM). Higher pre-clean bias-power and shorter pre-clean time demonstrate remarkable low via resistance and excellent Cu reliability performance.

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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