玻璃基板上的高性能底栅多晶硅/单晶硅晶体管

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307449

K. Shimizu, O. Sugiura, M. Matsumura

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引用次数: 4

摘要

底栅多晶硅/单晶硅tft首次在玻璃衬底上呈现出超过300 cm/sup //Vs的极高电子迁移率。这些tft可以通过标准的底栅a-Si/SiN tft工艺产生，只需要进行两次额外的准激光退火，即SiN栅极的激光预退火和活性薄硅层的双光束退火。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-performance bottom-gate poly-Si/SiN TFTs on glass-substrate

Bottom-gate poly-Si/SiN TFTs have been presented with extremely high electron mobility of more than 300 cm/sup 2//Vs on a glass-substrate, for the first time. These TFTs can be produced by the standard process for the bottom-gate a-Si/SiN TFTs with only two additional excimer-laser annealings, that is, the laser pre-annealing of the SiN gate and the dual-beam annealing of an active thin silicon layer.<>

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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