D. Sinitsky, S. Fung, S. Tang, P. Su, M. Chan, P. Ko, C. Hu
{"title":"用于SPICE的动态耗尽型SOI MOSFET模型","authors":"D. Sinitsky, S. Fung, S. Tang, P. Su, M. Chan, P. Ko, C. Hu","doi":"10.1109/VLSIT.1998.689222","DOIUrl":null,"url":null,"abstract":"We show, using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary R/sub th/C/sub th/ circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with T/sub si/, T/sub box/, T/sub ox/, W, and L.","PeriodicalId":402365,"journal":{"name":"1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A dynamic depletion SOI MOSFET model for SPICE\",\"authors\":\"D. Sinitsky, S. Fung, S. Tang, P. Su, M. Chan, P. Ko, C. Hu\",\"doi\":\"10.1109/VLSIT.1998.689222\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show, using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary R/sub th/C/sub th/ circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with T/sub si/, T/sub box/, T/sub ox/, W, and L.\",\"PeriodicalId\":402365,\"journal\":{\"name\":\"1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1998.689222\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1998.689222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We show, using measurements, that a transition between partial and full depletion (PD and FD) modes of operation as terminal voltages vary with time (dynamic depletion) has a strong impact on thin film SOI MOSFET characteristics. A model incorporating this effect is presented. It includes floating body, backgate, and body contact nodes, as well as impact ionization, GIDL, diode leakage and parasitic bipolar currents. Self-heating is modeled by an auxiliary R/sub th/C/sub th/ circuit. The model uses a single smooth equation over all operating regimes for each current and charge and is fully scalable with T/sub si/, T/sub box/, T/sub ox/, W, and L.
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