一种高压IGBT和二极管芯片组，设计用于2.8 kV直流链路级，具有扩展到最大阻塞电压的短路能力

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856766

F. Bauer, N. Kaminski, S. Linder, H. Zeller

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引用次数: 8

摘要

本文介绍了专为2.8 kV直流链路级硬开关条件下安全工作而设计的高压IGBT和二极管芯片组的实验特性。该设计的基本目标是在直流链路水平上降低二极管和igbt的宇宙射线诱导故障率。同时满足了在关断、反向恢复和短路条件下低静态和动态损耗以及宽SOA的通用要求。这些器件的阻断能力目前已超过4.5 kV。

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A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage

This paper presents the experimental characteristics of a high voltage IGBT and diode chip set designed for safe operation under hard switching conditions at the 2.8 kV DC link level. The fundamental goal of the design is a low cosmic ray induced failure rate for diodes as well as IGBTs at the DC link level. At the same time all the common requirements of low static and dynamic losses as well as wide SOA under turn-off, reverse recovery and short-circuit conditions are fulfilled. The blocking capability of these devices exceeds 4.5 kV by far.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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