C. Ho, T. Shen, P. Hsu, S. Chang, S. Wen, M. Lin, P. Wang, S. Liao, C. Chou, K. M. Peng, C. M. Wu, W. Chang, Y. H. Chen, F. Chen, L. W. Lin, T. Tsai, S. F. Lim, C. J. Yang, M. Shieh, H. Liao, C. H. Lin, P. Pai, T. Chan, Y. Chiao
{"title":"随机软误差抑制化学计量工程:CMOS兼容和可靠的1Mb HfO2-ReRAM与2个额外的掩模嵌入式物联网系统","authors":"C. Ho, T. Shen, P. Hsu, S. Chang, S. Wen, M. Lin, P. Wang, S. Liao, C. Chou, K. M. Peng, C. M. Wu, W. Chang, Y. H. Chen, F. Chen, L. W. Lin, T. Tsai, S. F. Lim, C. J. Yang, M. Shieh, H. Liao, C. H. Lin, P. Pai, T. Chan, Y. Chiao","doi":"10.1109/VLSIT.2016.7573366","DOIUrl":null,"url":null,"abstract":"12\" manufacturable 90nm CMOS fully compatible 1Mb HfO2-ReRAM by 2 extra masks between Metals with BEoL thermal stress immunity is for the first time achieved in this work. Cycle random soft error, for the first time systematically observed in this work, due to improper phase-transition of TiOδ on filament are successfully suppressed by stoichiometric engineering on HfO2 / reservoir interface to achieve reliable 20K / 100K endurance and 85°C 10 years retention. This technology can thus offer potential applications of embedded IoT systems due to low energy consumption and cost effective benefit.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Random soft error suppression by stoichiometric engineering: CMOS compatible and reliable 1Mb HfO2-ReRAM with 2 extra masks for embedded IoT systems\",\"authors\":\"C. Ho, T. Shen, P. Hsu, S. Chang, S. Wen, M. Lin, P. Wang, S. Liao, C. Chou, K. M. Peng, C. M. Wu, W. Chang, Y. H. Chen, F. Chen, L. W. Lin, T. Tsai, S. F. Lim, C. J. Yang, M. Shieh, H. Liao, C. H. Lin, P. Pai, T. Chan, Y. Chiao\",\"doi\":\"10.1109/VLSIT.2016.7573366\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"12\\\" manufacturable 90nm CMOS fully compatible 1Mb HfO2-ReRAM by 2 extra masks between Metals with BEoL thermal stress immunity is for the first time achieved in this work. Cycle random soft error, for the first time systematically observed in this work, due to improper phase-transition of TiOδ on filament are successfully suppressed by stoichiometric engineering on HfO2 / reservoir interface to achieve reliable 20K / 100K endurance and 85°C 10 years retention. This technology can thus offer potential applications of embedded IoT systems due to low energy consumption and cost effective benefit.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573366\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573366","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Random soft error suppression by stoichiometric engineering: CMOS compatible and reliable 1Mb HfO2-ReRAM with 2 extra masks for embedded IoT systems
12" manufacturable 90nm CMOS fully compatible 1Mb HfO2-ReRAM by 2 extra masks between Metals with BEoL thermal stress immunity is for the first time achieved in this work. Cycle random soft error, for the first time systematically observed in this work, due to improper phase-transition of TiOδ on filament are successfully suppressed by stoichiometric engineering on HfO2 / reservoir interface to achieve reliable 20K / 100K endurance and 85°C 10 years retention. This technology can thus offer potential applications of embedded IoT systems due to low energy consumption and cost effective benefit.
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