通过过程相关的SPICE模型将制造引入设计

S. Tirumala, Y. Mahotin, Xiao Lin, V. Moroz, Lee Smith, S. Krishnamurthy, L. Bomholt, D. Pramanik
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引用次数: 14

摘要

本文描述了构造紧凑的SPICE模型作为过程参数变化函数的方法。该方法涉及从硅校准的TCAD模拟中全局提取过程相关的SPICE模型参数。通过将提取的SPICE参数与TCAD仿真的器件特性进行比较,验证了模型的正确性。分析表明,在整个过程参数变化范围内,拟合良好。工艺相关的SPICE模型允许直接访问电路设计中的工艺参数变化。将提取的模型应用于基本数字电路中,以研究响应过程偏差的延迟变化。所提出的方法通过允许精确的设计灵敏度分析和参数良率评估,作为统计独立和可测量的过程变化的函数,显着提高了为制造而设计(DFM)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bringing manufacturing into design via process-dependent SPICE models
This paper describes methodology for constructing compact SPICE models as a function of process parameter variations. The methodology involves global extraction of process-dependant SPICE model parameters from silicon calibrated TCAD simulations. The model is validated by comparing device characteristics from the extracted SPICE parameters with those from TCAD simulations. The analysis demonstrates an excellent goodness of fit over the full range of process parameter variations. The process-dependant SPICE models allow direct access to process parameter variations in circuit design. The extracted models are employed in rudimentary digital circuits to investigate the delay variation in response to process deviations. The proposed approach significantly improves design-for-manufacturing (DFM) by allowing for accurate design sensitivity analysis and parametric yield assessment, as a function of statistically independent and measurable process variations
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