直接提取SPICE 3级参数，无需优化

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292902

J. Matsuda

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引用次数: 2

摘要

本文提出了SPICE 3级参数中X/sub j/、V/sub t0/、V/sub max/和kappa的直接提取方法，以控制制备过程中变化引起的参数散射。利用这些方法提取的参数值，模拟出的短沟道MOSFET器件的电流-电压特性与实测值吻合较好。所得到的值与使用优化参数值所得到的值几乎相同。由于提取的参数值直接反映了散射，因此该方法在此类电路设计中是有效的

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Direct extraction of SPICE level 3 parameters without using optimization

Direct extraction methods for X/sub j/, V/sub t0/, V/sub max/ and kappa in SPICE level 3 parameters have been developed to control the parameter scatters caused by variations in the fabrication process. When using the parameter values extracted with these methods, the simulated current-voltage characteristics of a short-channel MOSFET device fit the measured ones accurately. The values obtained are almost the same as can be obtained using optimized parameter values. Since the parameter values extracted reflect the scatters directly, the methods are effective for use in such circuit designs.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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