T. Cavioni, M. Cecchetti, M. Muschitiello, G. Spiazzi, I. Vottre, E. Zanoni
{"title":"通过电测量、二维模拟和红外显微镜对标准和双桶测试结构的闭锁特性进行表征","authors":"T. Cavioni, M. Cecchetti, M. Muschitiello, G. Spiazzi, I. Vottre, E. Zanoni","doi":"10.1109/ICMTS.1990.67877","DOIUrl":null,"url":null,"abstract":"The influence of different layout parameters on latchup susceptibility was studied on standard four-stripes test structures fabricated using two bulk processes: standard n-well and a twin-tub technology. Twin-tub structures show increased latchup hardness and guard-ring effectiveness, mainly due to the increased doping level and the consequent decrease in substrate and well resistances. Standard and twin-tub structures show marked three-dimensional effects in the holding characteristics, which lead to an uneven distribution of the latchup current within test structures and hysteresis in the I-V characteristics.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Latch-up characterization in standard and twin-tub test structures by electrical measurements, 2-D simulations and IR microscopy\",\"authors\":\"T. Cavioni, M. Cecchetti, M. Muschitiello, G. Spiazzi, I. Vottre, E. Zanoni\",\"doi\":\"10.1109/ICMTS.1990.67877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of different layout parameters on latchup susceptibility was studied on standard four-stripes test structures fabricated using two bulk processes: standard n-well and a twin-tub technology. Twin-tub structures show increased latchup hardness and guard-ring effectiveness, mainly due to the increased doping level and the consequent decrease in substrate and well resistances. Standard and twin-tub structures show marked three-dimensional effects in the holding characteristics, which lead to an uneven distribution of the latchup current within test structures and hysteresis in the I-V characteristics.<<ETX>>\",\"PeriodicalId\":196449,\"journal\":{\"name\":\"International Conference on Microelectronic Test Structures\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1990.67877\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Latch-up characterization in standard and twin-tub test structures by electrical measurements, 2-D simulations and IR microscopy
The influence of different layout parameters on latchup susceptibility was studied on standard four-stripes test structures fabricated using two bulk processes: standard n-well and a twin-tub technology. Twin-tub structures show increased latchup hardness and guard-ring effectiveness, mainly due to the increased doping level and the consequent decrease in substrate and well resistances. Standard and twin-tub structures show marked three-dimensional effects in the holding characteristics, which lead to an uneven distribution of the latchup current within test structures and hysteresis in the I-V characteristics.<>