FDSOI CMOS双后门控制的性能和功率调制

J. Yau, Jin Cai, L. Shi, R. Dennard, Arvind Kumar, Katherine L. Sactlger, A. Reznicek, P. Solomon, Q. Ouyang, S. Koester, W. Haensch
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引用次数: 3

摘要

我们首次展示了在薄盒(埋藏氧化物)FD(完全耗尽)SOI上制造的环形振荡器的功率性能调制,使用独立的nFET和pet的反向控制。薄盒有利于有效调制环特性与小(1-2V)独立的后门电压。逆变器延时增加30%,每级漏电流可降低100倍以上。另外,当待机电流增加2倍时,逆变器延时可提高15%。与传统CMOS工艺兼容,我们的研究结果表明,作为功率/性能优化和可变性控制的额外旋钮,baekgate技术对CMOS的持续扩展具有吸引力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FDSOI CMOS with dual backgate control for performance and power modulation
We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilitates an effective modulation of ring characteristics with small (1–2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100× with 30% increase of inverter delay. In addition, the inverter delay can be improved by 15% with 2× increase of the stand-by current. Compatible with conventional CMOS process, our results suggest the baekgate technology, an additional knob for power/performance optimization and variability control, is attractive for continued CMOS scaling.
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