闪存制造过程中栅极氧化物质量与下游等离子体暴露关系的研究

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1200931

S. Giancaterina, J. Rebrasse, B. Lecohier, O. Keller, M. Martinetti, S. Rounds

{"title":"闪存制造过程中栅极氧化物质量与下游等离子体暴露关系的研究","authors":"S. Giancaterina, J. Rebrasse, B. Lecohier, O. Keller, M. Martinetti, S. Rounds","doi":"10.1109/PPID.2003.1200931","DOIUrl":null,"url":null,"abstract":"Gate oxide is the most critical oxidation step in the flash memory fabrication sequence. Surfaces free of contaminants are required to grow high quality gate oxides. A correlation between oxide quality and resist removal techniques has been highlighted at the R8 STMicroelectronics production fab, comparing Axcelis FusionGemini ES asher results with those of full wet techniques.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication\",\"authors\":\"S. Giancaterina, J. Rebrasse, B. Lecohier, O. Keller, M. Martinetti, S. Rounds\",\"doi\":\"10.1109/PPID.2003.1200931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate oxide is the most critical oxidation step in the flash memory fabrication sequence. Surfaces free of contaminants are required to grow high quality gate oxides. A correlation between oxide quality and resist removal techniques has been highlighted at the R8 STMicroelectronics production fab, comparing Axcelis FusionGemini ES asher results with those of full wet techniques.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200931\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

栅极氧化是闪存制造过程中最关键的氧化步骤。生长高质量的栅极氧化物需要无污染物的表面。R8意法半导体生产厂强调了氧化物质量与抗蚀剂去除技术之间的相关性，并将Axcelis fusion mini ES asher的结果与全湿法技术的结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication

Gate oxide is the most critical oxidation step in the flash memory fabrication sequence. Surfaces free of contaminants are required to grow high quality gate oxides. A correlation between oxide quality and resist removal techniques has been highlighted at the R8 STMicroelectronics production fab, comparing Axcelis FusionGemini ES asher results with those of full wet techniques.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 8th International Symposium Plasma- and Process-Induced Damage.

自引率

0.00%

发文量