{"title":"双概率参数随机游走模型的零通量边界条件","authors":"M. Orlowski","doi":"10.1109/SISPAD.2003.1233650","DOIUrl":null,"url":null,"abstract":"Zero-flux boundary condition is revisited in the context of a two-probability-para meter and a rigorous combinatorial model. The two-parameter model distinguishes partial segregation, partial absorption, and partial reflection. Both models show that vanishing flux across the barrier can be realized for non-zero gradient of the dopant distribution at the boundary.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Zero-flux boundary condition in a two-probability-parameter random walk model\",\"authors\":\"M. Orlowski\",\"doi\":\"10.1109/SISPAD.2003.1233650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Zero-flux boundary condition is revisited in the context of a two-probability-para meter and a rigorous combinatorial model. The two-parameter model distinguishes partial segregation, partial absorption, and partial reflection. Both models show that vanishing flux across the barrier can be realized for non-zero gradient of the dopant distribution at the boundary.\",\"PeriodicalId\":220325,\"journal\":{\"name\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2003.1233650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Zero-flux boundary condition in a two-probability-parameter random walk model
Zero-flux boundary condition is revisited in the context of a two-probability-para meter and a rigorous combinatorial model. The two-parameter model distinguishes partial segregation, partial absorption, and partial reflection. Both models show that vanishing flux across the barrier can be realized for non-zero gradient of the dopant distribution at the boundary.