设计CMOS逻辑的性能指标

P. Maurine, N. Azémard, D. Auvergne
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引用次数: 0

摘要

CMOS工艺的快速发展使得必须使用性能指标作为简单而稳健的指标来评估设计流程的所有步骤中的不同替代方案。在本文中,我们提出了一些性能指标,用于评估CMOS设计的性能,并预测其在工艺迁移过程中的演变。这些指标被定义为过程速度表征,电池效率在负载和输入控制信号的持续时间方面,以及电源电压灵敏度。给出了不同工艺的验证实例,范围从1.2到0.18 /spl mu/m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance indicators for designing CMOS logic
The fast evolution of CMOS processes makes mandatory the use of metrics for performance as easy and robust indicators to evaluate the different alternatives at all the steps of the design flow. In this paper we present performance indicators used as well to evaluate the performances of CMOS design and to predict their evolution during process migration. These indicators are defined for process speed characterization, cell efficiency in terms of load and duration time of input controlling signals and for supply voltage sensitivity. Examples of validation are given for different processes ranging from 1.2 to 0.18 /spl mu/m.
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