{"title":"La对HfSiO高κ n-MOSFET偏置温度不稳定性的影响","authors":"D. Ang, G. Du","doi":"10.1109/ICICDT.2011.5783214","DOIUrl":null,"url":null,"abstract":"Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (∼0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy (∼0.26 eV). The latter is expected to have a significant impact on the positive-bias temperature instability of n-MOSFETs employing La-doped high-κ gate dielectrics.","PeriodicalId":402000,"journal":{"name":"2011 IEEE International Conference on IC Design & Technology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of La on the bias-temperature instability of the HfSiO High-κ n-MOSFET\",\"authors\":\"D. Ang, G. Du\",\"doi\":\"10.1109/ICICDT.2011.5783214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (∼0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy (∼0.26 eV). The latter is expected to have a significant impact on the positive-bias temperature instability of n-MOSFETs employing La-doped high-κ gate dielectrics.\",\"PeriodicalId\":402000,\"journal\":{\"name\":\"2011 IEEE International Conference on IC Design & Technology\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-05-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference on IC Design & Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2011.5783214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2011.5783214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of La on the bias-temperature instability of the HfSiO High-κ n-MOSFET
Lanthanum (La), which has been used in recent works to tune the threshold voltage of HfSiO high-κ n-MOSFETs, is shown to introduce a new bulk degradation mechanism. Unlike the conventional charge trapping mechanism which exhibits low activation energy (∼0.05 eV) and fast post-stress recovery, the La induced degradation mechanism is found to be relatively permanent and has higher activation energy (∼0.26 eV). The latter is expected to have a significant impact on the positive-bias temperature instability of n-MOSFETs employing La-doped high-κ gate dielectrics.