用于DNA检测的mosfet配置

2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI:10.1109/SMICND.2018.8539753

L. Benea, M. Bawedin, S. Cristoloveanu, I. Ionica, M. Banu, M. Simion, M. Kusko, C. Delacour

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引用次数: 2

摘要

本文提出了一种利用ψ-MOSFET结构进行DNA检测的新方法。对漏极电流与栅电压的系统测量揭示了与附着在器件顶表面的生化物质的电荷相对应的特性的重要变化。结果经荧光扫描验证。该方法具有简便、灵敏等优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ψ-MOSFET Configuration for DNA Detection

This work proposes a novel method for DNA detection by using the ψ-MOSFET configuration. Systematic measurements of the drain current vs. gate voltage revealed an important shift of the characteristics corresponding to the charge of the biochemical species attached to the top surface of the device. The results were validated by fluorescent scanning. The advantages of this method are its simplicity and sensitivity.

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2018 International Semiconductor Conference (CAS)

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