电流应力作用下微观组织对微接头空位和应力分布的影响

Hua Xiong, Zhiheng Huang, P. Conway, Qingfeng Zeng
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It is found that the decrease of the amount of interface due to phase coarsening in the Sn37Pb micro joint can accelerate vacancy accumulation. As a result, during electromigration the stress can quickly increase in the joint aged for a longer time. In addition, the connectivity of the Pb-rich phase also affects the electromigration behavior. A well-interconnected network of Pb-rich phase can accelerate the vacancy accumulation and thus stress concentration. Due to the combined effect of the connectivity of Pb-rich phase and the amount of interface, the maximum stresses caused by electromigration in three joints of different compositions, i.e. Sn47Pb, Sn37Pb, and Sn27Pb, are in the order of Sn37Pb>Sn47Pb>Sn27Pb. Introduction The risk of electromigration-induced failure increases in three-dimensional integrated circuits, due to a high current density in company with the miniaturization of interconnects. In order to improve reliability, the mechanisms causing failure due to electromigration need to be understood. As a form of mass diffusion driven by electron flow, the process of electromigration interacts with the microstructures in interconnects in a complicated way. The rate of electromigration can be influenced by microstructural features such as crystal grains, grain boundaries, and different phases, where the atom diffusivities are different [1,2]. The atom fluxes driven by electric current can in turn affect microstructural evolution [3,4]. It is of significant importance to consider the effects of microstructures on an accurate prediction of the electromigration behavior in interconnects. Extensive simulation studies on electromigration have been carried out for Cu and Al interconnects [5]. However, electromigration simulations for micro solder joints, especially those based on microstructure, are relatively few. Compared to Cu and Al, most micro joints are composed of binary or ternary alloys and possess microstructures with a multicomponent and multi-phase nature. Interdiffusion occurs in micro joints, which can lead to many failure modes, e.g. the rapid dissolution of Cu under-bump metallization [6], and the formation of Kirkendall voids [7]. In addition, fast diffusion of atoms can occur along the interfaces between different phases as well as along the grain boundaries [8], which may accelerate the electromigration process. Therefore, the electromigration behavior of micro joints can be different from that in Cu and Al interconnects [9] and is worthy of detailed investigations. In this work, the microstructure-based simulations of electromigration in micro solder joints are carried out. The microstructures in SnPb and SnCu micro joints are firstly modeled and simulated by using a phase field model developed by Dreyer and Müller [10]. Based on the simulated microstructure, the electromigration model developed by Sukharev et al. [11] is then applied to study the pre-void distributions of vacancy and stress under current stressing. Firstly, the electromigration behaviors of two micro joints with compositions of Sn27Pb and Sn15Cu are compared. The differences between the Pb-rich phase and the Cu6Sn5 intermetallic compound (IMC) in determining the vacancy and stress distributions during electromigration are discussed. In addition, the dependence of stress concentration on vacancy generation and annihilation is also studied. Secondly, the effects of phase morphology on electromigration are further investigated by considering two cases of morphological changes respectively: (1) the phase coarsening process in a Sn37Pb micro joint; (2) the changes in phase morphology by varying the composition and therefore Sn47Pb, Sn37Pb, and Sn27Pb micro joints are studied. Modeling Methodology 1. Microstructural Modeling by a Phase Field Model The phase field model for binary alloys developed by Dreyer and Müller [10] is used in this work to model and simulate the microstructure in micro solder joints. The mass fraction of component A, denoted as CA, in an A-B alloy is the order parameter of the simulated microstructures. A A C C represents the phase, i.e. the A-rich phase, and A A C C represents the phase, i.e. the B-rich phase, where A C and A C are the mass fractions of component A at thermodynamic 978-1-4673-4944-4©IEEE 2012 equilibrium in the phase and the phase, respectively. 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Stress concentration is predicted at the interfaces between phases, which is more severe when more vacancyplated atom pairs are generated or annihilated. Compared to the Sn15Cu joint, there are more vacancies accumulated and annihilated at the cathode of the Sn27Pb joint and thus resulting in a higher von Mises stress. The effects of phase morphology on electromigration are further investigated. It is found that the decrease of the amount of interface due to phase coarsening in the Sn37Pb micro joint can accelerate vacancy accumulation. As a result, during electromigration the stress can quickly increase in the joint aged for a longer time. In addition, the connectivity of the Pb-rich phase also affects the electromigration behavior. A well-interconnected network of Pb-rich phase can accelerate the vacancy accumulation and thus stress concentration. Due to the combined effect of the connectivity of Pb-rich phase and the amount of interface, the maximum stresses caused by electromigration in three joints of different compositions, i.e. Sn47Pb, Sn37Pb, and Sn27Pb, are in the order of Sn37Pb>Sn47Pb>Sn27Pb. Introduction The risk of electromigration-induced failure increases in three-dimensional integrated circuits, due to a high current density in company with the miniaturization of interconnects. In order to improve reliability, the mechanisms causing failure due to electromigration need to be understood. As a form of mass diffusion driven by electron flow, the process of electromigration interacts with the microstructures in interconnects in a complicated way. The rate of electromigration can be influenced by microstructural features such as crystal grains, grain boundaries, and different phases, where the atom diffusivities are different [1,2]. The atom fluxes driven by electric current can in turn affect microstructural evolution [3,4]. It is of significant importance to consider the effects of microstructures on an accurate prediction of the electromigration behavior in interconnects. Extensive simulation studies on electromigration have been carried out for Cu and Al interconnects [5]. However, electromigration simulations for micro solder joints, especially those based on microstructure, are relatively few. Compared to Cu and Al, most micro joints are composed of binary or ternary alloys and possess microstructures with a multicomponent and multi-phase nature. Interdiffusion occurs in micro joints, which can lead to many failure modes, e.g. the rapid dissolution of Cu under-bump metallization [6], and the formation of Kirkendall voids [7]. In addition, fast diffusion of atoms can occur along the interfaces between different phases as well as along the grain boundaries [8], which may accelerate the electromigration process. Therefore, the electromigration behavior of micro joints can be different from that in Cu and Al interconnects [9] and is worthy of detailed investigations. In this work, the microstructure-based simulations of electromigration in micro solder joints are carried out. The microstructures in SnPb and SnCu micro joints are firstly modeled and simulated by using a phase field model developed by Dreyer and Müller [10]. Based on the simulated microstructure, the electromigration model developed by Sukharev et al. [11] is then applied to study the pre-void distributions of vacancy and stress under current stressing. Firstly, the electromigration behaviors of two micro joints with compositions of Sn27Pb and Sn15Cu are compared. 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引用次数: 0

摘要

基于相场模型模拟微观结构,研究了电流应力作用下SnPb和SnCu微焊点的空位扩散和应力演化规律。空位被电流驱动到阴极,并在空位形成能较低的相中积累。在相间界面处预测了应力集中,当产生或湮灭更多的空镀原子对时,应力集中更为严重。与Sn15Cu接头相比,Sn27Pb接头的阴极有更多的空位积累和湮灭,从而导致更高的von Mises应力。进一步研究了相形态对电迁移的影响。结果表明,Sn37Pb微接头中相粗化导致的界面数量减少会加速空位的积累。结果表明,在电迁移过程中,老化时间较长的接头应力会迅速增大。此外,富铅相的连通性也会影响电迁移行为。富铅矿相相互连接良好的网络可以加速空位积累,从而加速应力集中。由于富铅相的连通性和界面数量的共同作用,在Sn47Pb、Sn37Pb和Sn27Pb三个不同组成的节理中,电迁移引起的最大应力大小依次为Sn37Pb>Sn47Pb>Sn27Pb。在三维集成电路中,由于高电流密度和互连的小型化,电迁移导致故障的风险增加。为了提高可靠性,需要了解引起电迁移失效的机制。电迁移是一种由电子流驱动的质量扩散过程,其过程与微结构相互作用复杂。电迁移速率会受到晶粒、晶界和不同相等微观结构特征的影响,其中原子扩散率是不同的[1,2]。由电流驱动的原子通量反过来影响微观结构的演变[3,4]。考虑微观结构对互连中电迁移行为的准确预测具有重要意义。对Cu和Al互连进行了大量的电迁移模拟研究[5]。然而,针对微焊点的电迁移模拟,特别是基于微观结构的模拟,相对较少。与Cu和Al相比,大多数微接头由二元或三元合金组成,具有多组分、多相性质的显微组织。微接头中发生相互扩散,导致多种失效模式,如铜在凹凸金属化下的快速溶解[6],Kirkendall空洞的形成[7]。此外,原子沿不同相之间的界面以及沿晶界可以发生快速扩散[8],这可能会加速电迁移过程。因此,微接头的电迁移行为可能与Cu和Al互连中的电迁移行为不同[9],值得详细研究。在这项工作中,进行了基于微结构的微焊点电迁移模拟。首先采用Dreyer和m<s:1> ller[10]建立的相场模型对SnPb和SnCu微接头的微观组织进行了建模和模拟。在模拟微观结构的基础上,应用Sukharev等[11]建立的电迁移模型,研究电流应力作用下空位和应力的预孔隙分布。首先,比较了两种含Sn27Pb和Sn15Cu的微接头的电迁移行为。讨论了富pb相与Cu6Sn5金属间化合物(IMC)在电迁移过程中决定空位和应力分布的差异。此外,还研究了应力集中对空位产生和湮灭的依赖性。其次,进一步研究了相形态对电迁移的影响,分别考虑了两种形态变化:(1)Sn37Pb微接头中相粗化过程;(2)研究了Sn47Pb、Sn37Pb和Sn27Pb微接头组成变化对相形貌的影响。建模方法本文采用Dreyer和m<s:2> ller[10]开发的二元合金相场模型对微细焊点的微观组织进行建模和模拟。A组分在A- b合金中的质量分数(CA)是模拟显微组织的阶参量。A A C C表示相,即富A相;A A C C表示相,即富A相。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of microstructure on vacancy and stress distributions in micro joints under current stressing
The vacancy diffusion and stress evolution in SnPb and SnCu micro solder joints under current stressing are studied based on simulated microstructure from a phase field model. The vacancies are driven to the cathode by electric current and accumulated in the phase with lower vacancy formation energy. Stress concentration is predicted at the interfaces between phases, which is more severe when more vacancyplated atom pairs are generated or annihilated. Compared to the Sn15Cu joint, there are more vacancies accumulated and annihilated at the cathode of the Sn27Pb joint and thus resulting in a higher von Mises stress. The effects of phase morphology on electromigration are further investigated. It is found that the decrease of the amount of interface due to phase coarsening in the Sn37Pb micro joint can accelerate vacancy accumulation. As a result, during electromigration the stress can quickly increase in the joint aged for a longer time. In addition, the connectivity of the Pb-rich phase also affects the electromigration behavior. A well-interconnected network of Pb-rich phase can accelerate the vacancy accumulation and thus stress concentration. Due to the combined effect of the connectivity of Pb-rich phase and the amount of interface, the maximum stresses caused by electromigration in three joints of different compositions, i.e. Sn47Pb, Sn37Pb, and Sn27Pb, are in the order of Sn37Pb>Sn47Pb>Sn27Pb. Introduction The risk of electromigration-induced failure increases in three-dimensional integrated circuits, due to a high current density in company with the miniaturization of interconnects. In order to improve reliability, the mechanisms causing failure due to electromigration need to be understood. As a form of mass diffusion driven by electron flow, the process of electromigration interacts with the microstructures in interconnects in a complicated way. The rate of electromigration can be influenced by microstructural features such as crystal grains, grain boundaries, and different phases, where the atom diffusivities are different [1,2]. The atom fluxes driven by electric current can in turn affect microstructural evolution [3,4]. It is of significant importance to consider the effects of microstructures on an accurate prediction of the electromigration behavior in interconnects. Extensive simulation studies on electromigration have been carried out for Cu and Al interconnects [5]. However, electromigration simulations for micro solder joints, especially those based on microstructure, are relatively few. Compared to Cu and Al, most micro joints are composed of binary or ternary alloys and possess microstructures with a multicomponent and multi-phase nature. Interdiffusion occurs in micro joints, which can lead to many failure modes, e.g. the rapid dissolution of Cu under-bump metallization [6], and the formation of Kirkendall voids [7]. In addition, fast diffusion of atoms can occur along the interfaces between different phases as well as along the grain boundaries [8], which may accelerate the electromigration process. Therefore, the electromigration behavior of micro joints can be different from that in Cu and Al interconnects [9] and is worthy of detailed investigations. In this work, the microstructure-based simulations of electromigration in micro solder joints are carried out. The microstructures in SnPb and SnCu micro joints are firstly modeled and simulated by using a phase field model developed by Dreyer and Müller [10]. Based on the simulated microstructure, the electromigration model developed by Sukharev et al. [11] is then applied to study the pre-void distributions of vacancy and stress under current stressing. Firstly, the electromigration behaviors of two micro joints with compositions of Sn27Pb and Sn15Cu are compared. The differences between the Pb-rich phase and the Cu6Sn5 intermetallic compound (IMC) in determining the vacancy and stress distributions during electromigration are discussed. In addition, the dependence of stress concentration on vacancy generation and annihilation is also studied. Secondly, the effects of phase morphology on electromigration are further investigated by considering two cases of morphological changes respectively: (1) the phase coarsening process in a Sn37Pb micro joint; (2) the changes in phase morphology by varying the composition and therefore Sn47Pb, Sn37Pb, and Sn27Pb micro joints are studied. Modeling Methodology 1. Microstructural Modeling by a Phase Field Model The phase field model for binary alloys developed by Dreyer and Müller [10] is used in this work to model and simulate the microstructure in micro solder joints. The mass fraction of component A, denoted as CA, in an A-B alloy is the order parameter of the simulated microstructures. A A C C represents the phase, i.e. the A-rich phase, and A A C C represents the phase, i.e. the B-rich phase, where A C and A C are the mass fractions of component A at thermodynamic 978-1-4673-4944-4©IEEE 2012 equilibrium in the phase and the phase, respectively. The evolution of the microstructure is simulated by solving the following equation [10]:
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