B. Dong, Hao Tian, M. Zervas, T. Kippenberg, S. Bhave
{"title":"PORT:压电光学谐振调谐器","authors":"B. Dong, Hao Tian, M. Zervas, T. Kippenberg, S. Bhave","doi":"10.1109/MEMSYS.2018.8346661","DOIUrl":null,"url":null,"abstract":"This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates the nitride resonator and waveguide. The PORT is defined by undercutting the cladding layer with a lateral silicon etch. It tunes the optical wavelength by 20pm on applying 60 V to the top electrode with a 0.5nA current draw. The thick oxide cladding preserves the resonator's loaded quality factor Qoptical of 64,000 across the entire tuning range. The first bending mode is at 1.1MHz enabling a tuning speed of <1 μs.","PeriodicalId":400754,"journal":{"name":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"PORT: A piezoelectric optical resonance tuner\",\"authors\":\"B. Dong, Hao Tian, M. Zervas, T. Kippenberg, S. Bhave\",\"doi\":\"10.1109/MEMSYS.2018.8346661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates the nitride resonator and waveguide. The PORT is defined by undercutting the cladding layer with a lateral silicon etch. It tunes the optical wavelength by 20pm on applying 60 V to the top electrode with a 0.5nA current draw. The thick oxide cladding preserves the resonator's loaded quality factor Qoptical of 64,000 across the entire tuning range. The first bending mode is at 1.1MHz enabling a tuning speed of <1 μs.\",\"PeriodicalId\":400754,\"journal\":{\"name\":\"2018 IEEE Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2018.8346661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2018.8346661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This abstract presents an aluminum nitride (AlN) piezoelectric actuator for tuning optical resonance modes of silicon nitride photonic resonators. The AlN actuator is fabricated on top of a thick silicon dioxide cladding that encapsulates the nitride resonator and waveguide. The PORT is defined by undercutting the cladding layer with a lateral silicon etch. It tunes the optical wavelength by 20pm on applying 60 V to the top electrode with a 0.5nA current draw. The thick oxide cladding preserves the resonator's loaded quality factor Qoptical of 64,000 across the entire tuning range. The first bending mode is at 1.1MHz enabling a tuning speed of <1 μs.