基于测量和仿真的三井结构自适应体偏技术降低开销

Y. Ogasahara, T. Sekigawa, M. Hioki, T. Nakagawa, T. Tsutsumi, H. Koike
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引用次数: 2

摘要

本文介绍了自适应体偏法中由于三井结构而显著减少的面积开销。在65nm工艺上实施的三井teg违反了电压容限的设计规则。根据测量结果重新检查电压容差,在65nm工艺中,深n井间距减少了60%。在器件仿真的基础上,提出了一种进一步降低开销的新方法,并与实测结果进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reduction of overhead in adaptive body bias technology due to triple-well structure based on measurement and simulation
This paper presents the significant reduction of the area overhead due to triple-well structure for adaptive body bias methods. Triple-well TEGs which include violation of design rules originating from voltage tolerance were implemented on a 65nm process. Reexamining voltage tolerance based on measurement results reduced deep n-wells spacing by 60% on the 65nm process. A new method for further overhead reduction is proposed based on a device simulation which is validated with measurement results.
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