改进型HSINFET采用沟槽式JBS注入器

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515043

Han-soo Kim, Jae-Hyung Kim, Byeong-hoon Lee, M. Han, Seung-Youp Han, Yearn-Ik Choi, Sang-Koo Chung

{"title":"改进型HSINFET采用沟槽式JBS注入器","authors":"Han-soo Kim, Jae-Hyung Kim, Byeong-hoon Lee, M. Han, Seung-Youp Han, Yearn-Ik Choi, Sang-Koo Chung","doi":"10.1109/ISPSD.1995.515043","DOIUrl":null,"url":null,"abstract":"A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm/sup 2/.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The modified HSINFET using the trenched JBS injector\",\"authors\":\"Han-soo Kim, Jae-Hyung Kim, Byeong-hoon Lee, M. Han, Seung-Youp Han, Yearn-Ik Choi, Sang-Koo Chung\",\"doi\":\"10.1109/ISPSD.1995.515043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm/sup 2/.\",\"PeriodicalId\":200109,\"journal\":{\"name\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1995.515043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1995.515043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种混合肖特基注入场效应晶体管(HSINFET)，它可以在不牺牲锁相能力和关断特性的情况下增加正向导通电流。该结构的特点是混合肖特基注入器是由沟槽侧壁肖特基接触和沟槽底部的pn结注入器实现的。对所提出的HSINFET器件特性进行了数值模拟，并与传统器件进行了比较。在100 a /cm/sup 2/时，所提出的HSINFET的正向压降比传统的HSINFET低0.4 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The modified HSINFET using the trenched JBS injector

A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm/sup 2/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

自引率

0.00%

发文量