采用先进的样品制备方案进行高效的原位TEM横截面和平面视图分析

K. Peng, Kim Hsu, Finn Ger, Tsung-Chang Tsai
{"title":"采用先进的样品制备方案进行高效的原位TEM横截面和平面视图分析","authors":"K. Peng, Kim Hsu, Finn Ger, Tsung-Chang Tsai","doi":"10.1109/IPFA.2018.8452550","DOIUrl":null,"url":null,"abstract":"A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel Solution for Efficient in Situ TEM Cross-Section and Plan-View Analyses with An Advanced Sample Preparation Scheme\",\"authors\":\"K. Peng, Kim Hsu, Finn Ger, Tsung-Chang Tsai\",\"doi\":\"10.1109/IPFA.2018.8452550\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452550\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文提出并论证了一种利用原位瞬变电磁法进行失效分析的新方法。通过巧妙的样品制备方案,该方法使我们能够以有效的方式对芯片中的相同故障部位进行平面视图和横断面TEM检查。样品制备并不困难,可以用常规工具进行处理。首先,制备了用于平面分析的大面积片层,并适当调整扫描电镜检查条件,以提高故障部位显示的电压对比度。然后通过FIB铣削对薄片进行进一步处理,以便用横截面透射电镜进行进一步检查。与传统制备TEM P-V样品的方法相比,该方法可节省70%以上的时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Solution for Efficient in Situ TEM Cross-Section and Plan-View Analyses with An Advanced Sample Preparation Scheme
A novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.
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