改善ITOX条件，实现低缺陷密度和BOX击穿

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI:10.1109/SOI.1997.634909

J. Schwank, M. Anc, M. Shaneyfelt, B. Draper, T.L. Meisenheimer, W. L. Warren, K. Vanheusden, D. Fleetwood, L.P. Schanwald

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引用次数: 0

摘要

形成高质量低剂量SIMOX层存在狭窄的剂量-能量过程窗口。工艺不稳定性要求退火方案，扩大工艺窗口，以提高可制造性。正如最近所示，通过在高氧化环境中退火，薄埋氧化物的完整性得到了改善。在这项工作中，我们将研究扩展到高温氧化对薄BOX SIMOX的完整性和辐射硬度的影响，并从工艺窗口的极端端注入剂量。此外，我们还探讨了中等温度H/sub / 2退火对BOX完整性的影响。

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Improving ITOX conditions for low defect density and BOX breakdown

A narrow dose-energy process window exists for the formation of high-quality low dose SIMOX layers. Process instabilities require annealing schemes that enlarge the process window to improve manufacturability. As recently shown, the integrity of thin buried oxides has been improved by annealing in a highly oxidizing ambient. In this work, we extend the investigations to the effects of high temperature oxidation on the integrity and radiation hardness of the thin BOX SIMOX implanted with doses from the extreme ends of the process window. In addition, we explore the effects of moderate temperature H/sub 2/ anneals on BOX integrity.

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1997 IEEE International SOI Conference Proceedings

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