具有LOCOS-和沟槽隔离的反向击穿n/sup +/-二极管的光电特性

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292924

T. Ohzone, H. Iwata

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引用次数: 1

摘要

本文测量了由硅局部氧化(LOCOS)和沟槽隔离制备的反向偏置n/sup +/-二极管的光强分布和光发射图像，以及光子计数的各向异性特征。在发射的光子能量上也观察到类似的分布。沟槽隔离二极管实验结果的波动比locos隔离二极管实验结果的波动要大。当反向电流增大时，波动减小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoemission characteristics of reverse-breakdown n/sup +/-diodes with LOCOS- and trench-isolation

Photoemission-intensity profiles and photoemission images, with and without an optical filter, and anisotropic characteristics of the photon count from a reverse-biased n/sup +/-diode fabricated by local oxidation of silicon (LOCOS)- and trench-isolation are measured. Similar profiles are observed independently on the emitted photon energies. The fluctuations of the experimental results are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones. The fluctuations decrease as the reverse current increases.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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