不同电镀条件下通硅孔(TSV)填充失效的研究

2019 IEEE 21st Electronics Packaging Technology Conference (EPTC) Pub Date : 2019-12-01 DOI:10.1109/EPTC47984.2019.9026599

Gilho Hwang, R. Kalaiselvan, M. I. E. Sam, Hsiao Hsiang-Yao

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引用次数: 1

摘要

研究了TSV铜在不同电镀条件下的充铜失效。5um × 50um和10um × 100um TSV Cu填充采用恒流电镀。我们研究了无缺陷TSV和有缺陷TSV的输出电压，以了解不同的Cu生长行为。电镀过程中的搅拌影响电镀电流的适用范围。与搅拌电镀相比，在无搅拌的情况下，10um × 100um TSV可以施加较大的电流，而在5um × 50um TSV上施加较低的电流会导致充铜失败。电镀过程中电压的变化揭示了添加剂的竞争性吸附。初始电压降与TSV充铜失效密切相关。

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Study on Through Silicon Via (TSV) filling failures on various electroplating conditions

TSV Cu filling failures in different electroplating condition were studied. Constant current electroplating was used for 5um x 50um and 10um x 100um TSV Cu filling. We investigated output voltage of defect-free TSV and TSV with defect to understand the different Cu growth behavior. Agitation during electroplating affects the range of applicable electroplating current. Compared to electroplating with agitation, higher current can be applied for 10um x 100um TSV without agitation while lower current for 5um x 50um TSV has Cu filling failure. Voltage variation during electroplating reveals the competitive adsorption of additives. Initial voltage drop is strongly related to TSV Cu filling failure.

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来源期刊

2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)

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