在不增加引脚二极管恢复电流的情况下，实现4.5kV IEGT高速导通栅极驱动

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694419

Yamato Miki, M. Mukunoki, Takashi Matsuyoshi, M. Tsukuda, I. Omura

{"title":"在不增加引脚二极管恢复电流的情况下，实现4.5kV IEGT高速导通栅极驱动","authors":"Yamato Miki, M. Mukunoki, Takashi Matsuyoshi, M. Tsukuda, I. Omura","doi":"10.1109/ISPSD.2013.6694419","DOIUrl":null,"url":null,"abstract":"4.5 kV IEGT turn-on loss reduction is experimentally and numerically achieved by employing the proposed simple two step gate drive method without affecting PiN diode reverse recovery performance. It was found that 14% of turn-on loss is reduced only by the simple method. This study determines, for the first time, the optimum gate driving in the two step gate drive which can reduce IEGT turn-on loss maximally without affecting PiN diode reverse recovery performance by TCAD simulation. The method is simple yet effective for reducing switching loss of high voltage IEGT.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High speed turn-on gate driving for 4.5kV IEGT without increase in PiN diode recovery current\",\"authors\":\"Yamato Miki, M. Mukunoki, Takashi Matsuyoshi, M. Tsukuda, I. Omura\",\"doi\":\"10.1109/ISPSD.2013.6694419\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"4.5 kV IEGT turn-on loss reduction is experimentally and numerically achieved by employing the proposed simple two step gate drive method without affecting PiN diode reverse recovery performance. It was found that 14% of turn-on loss is reduced only by the simple method. This study determines, for the first time, the optimum gate driving in the two step gate drive which can reduce IEGT turn-on loss maximally without affecting PiN diode reverse recovery performance by TCAD simulation. The method is simple yet effective for reducing switching loss of high voltage IEGT.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694419\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694419","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在不影响PiN二极管反向恢复性能的情况下，采用简单的两阶栅极驱动方法，实验和数值上实现了4.5 kV IEGT导通损耗降低。结果发现，仅采用简单的方法即可减少14%的导通损失。本研究首次通过TCAD仿真确定了在不影响PiN二极管反向恢复性能的前提下，最大限度降低IEGT导通损耗的两阶栅极驱动中的最佳栅极驱动。该方法简单有效地降低了高压IEGT的开关损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High speed turn-on gate driving for 4.5kV IEGT without increase in PiN diode recovery current

4.5 kV IEGT turn-on loss reduction is experimentally and numerically achieved by employing the proposed simple two step gate drive method without affecting PiN diode reverse recovery performance. It was found that 14% of turn-on loss is reduced only by the simple method. This study determines, for the first time, the optimum gate driving in the two step gate drive which can reduce IEGT turn-on loss maximally without affecting PiN diode reverse recovery performance by TCAD simulation. The method is simple yet effective for reducing switching loss of high voltage IEGT.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

自引率

0.00%

发文量