CPI稳健BEOL的设计方面

Mario Gonzalez, L. Kljucar, B. Vandevelde, I. De Wolf, Z. Tokei
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引用次数: 4

摘要

在本文中,我们提出了我们的方法,以建立在包的不同位置的诱导应力及其对后端线(BEOL)强度的影响的定量比较。采用具有紧密间距和无铅焊点的芯片堆栈封装(CSP)作为测试载体。分析了焊料球与BEOL之间的不同互连结构,包括刚性钝化层与具有不同厚度和开口的聚酰亚胺应力缓冲层的组合。结果表明,最外层焊点的弯矩在BEOL层中引起了较高的拉伸应力,增加钝化层的厚度可以减小该应力。针对这种特殊情况,提出了应力缓冲层的最优几何形状,包括厚度和开口直径。分析了具有不同通孔互连密度的2金属层结构下BEOL上的应力和能量释放率(ERR)。同时增加低k材料的刚度和通孔密度,可以提高BEOL的强度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design aspects for CPI robust BEOL
In this paper we present our methodology to establish a quantitative comparison of the induced stresses at different locations of the package and their effect on the strength of the back-end-of-line (BEOL). A Chip Stack Package (CSP) with tight pitch and lead free solder joints is used as test vehicle. Different configurations of the interconnection between the solder balls and the BEOL, including a stiff passivation layer combined with a polyimide stress buffer layer with different thickness and openings are analyzed. It was found that the bending moment of the outermost solder joint induces high tensile stresses in the BEOL layer and this stress is reduced by increasing the thickness of the passivation layer. For this particular case, an optimal geometry of the stress buffer, in terms of thickness and open diameter is proposed. The stresses and energy release rate (ERR) induced on the BEOL is analyzed in a 2 metal layer configuration with different densities of via interconnections. The strength of the BEOL is improved when increasing both, the stiffness of the low-k material and the density of vias.
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