热鲁棒原子层通过沉积后退火沉积了ZrO2栅极介电膜

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044232

H. Jung, Hyo Kyeom Kim, Sang Young Lee, N. Lee, T. Park, C. Hwang

{"title":"热鲁棒原子层通过沉积后退火沉积了ZrO2栅极介电膜","authors":"H. Jung, Hyo Kyeom Kim, Sang Young Lee, N. Lee, T. Park, C. Hwang","doi":"10.1109/ESSDERC.2011.6044232","DOIUrl":null,"url":null,"abstract":"The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO<inf>2</inf> and HfO<inf>2</inf> gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO<inf>2</inf> were improved, while those of HfO<inf>2</inf> were deteriorated. The improved insulating properties of ZrO<inf>2</inf> are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its crystalline structure to the tetragonal phase. The degraded insulating properties of HfO<inf>2</inf> after PDA at high temperatures were due to the abrupt increase of IL thickness and the generation of current paths through grain boundaries. The different IL growth between HfO<inf>2</inf> and ZrO<inf>2</inf> after PDA could be understood from the different formation energy of oxygen interstitials in the two dielectric films.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing\",\"authors\":\"H. Jung, Hyo Kyeom Kim, Sang Young Lee, N. Lee, T. Park, C. Hwang\",\"doi\":\"10.1109/ESSDERC.2011.6044232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO<inf>2</inf> and HfO<inf>2</inf> gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO<inf>2</inf> were improved, while those of HfO<inf>2</inf> were deteriorated. The improved insulating properties of ZrO<inf>2</inf> are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its crystalline structure to the tetragonal phase. The degraded insulating properties of HfO<inf>2</inf> after PDA at high temperatures were due to the abrupt increase of IL thickness and the generation of current paths through grain boundaries. The different IL growth between HfO<inf>2</inf> and ZrO<inf>2</inf> after PDA could be understood from the different formation energy of oxygen interstitials in the two dielectric films.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044232\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了沉积后退火对ZrO2和HfO2栅极介质薄膜电学特性的影响。经600℃PDA处理后，ZrO2的绝缘性能得到改善，而HfO2的绝缘性能则变差。ZrO2绝缘性能的提高是由于界面层(IL)厚度的增加和晶体结构向四方相的转变。高温下PDA后HfO2的绝缘性能下降是由于IL厚度的突然增加和通过晶界的电流路径的产生。HfO2和ZrO2在PDA后IL生长的差异可以从两种介质膜中氧间隙形成能的不同来理解。

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Thermally robust atomic layer deposited ZrO2 gate dielectric films upon the post-deposition annealing

The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO2 and HfO2 gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO2 were improved, while those of HfO2 were deteriorated. The improved insulating properties of ZrO2 are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its crystalline structure to the tetragonal phase. The degraded insulating properties of HfO2 after PDA at high temperatures were due to the abrupt increase of IL thickness and the generation of current paths through grain boundaries. The different IL growth between HfO2 and ZrO2 after PDA could be understood from the different formation energy of oxygen interstitials in the two dielectric films.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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