用于MEMS与CMOS单片集成的嵌入式微机械器件

J.H. Smith, S. Montague, J. Sniegowski, J. Murray, P. McWhorter
{"title":"用于MEMS与CMOS单片集成的嵌入式微机械器件","authors":"J.H. Smith, S. Montague, J. Sniegowski, J. Murray, P. McWhorter","doi":"10.1109/IEDM.1995.499295","DOIUrl":null,"url":null,"abstract":"A flexible, modular manufacturing process for integrating micromechanical and microelectronic devices has been developed. This process embeds the micromechanical devices in an anisotropically etched trench below the surface of the wafer. Prior to microelectronic device fabrication, this trench is refilled with oxide, chemical-mechanically polished, and sealed with a nitride cap in order to embed the micromechanical devices below the surface of the planarized wafer. The feasibility of this technique in a manufacturing environment has been demonstrated by combining a variety of embedded micromechanical structures with a 2 /spl mu/m CMOS process on 6 inch wafers. A yield of 78% has been achieved on the first devices manufactured using this technique.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"211","resultStr":"{\"title\":\"Embedded micromechanical devices for the monolithic integration of MEMS with CMOS\",\"authors\":\"J.H. Smith, S. Montague, J. Sniegowski, J. Murray, P. McWhorter\",\"doi\":\"10.1109/IEDM.1995.499295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A flexible, modular manufacturing process for integrating micromechanical and microelectronic devices has been developed. This process embeds the micromechanical devices in an anisotropically etched trench below the surface of the wafer. Prior to microelectronic device fabrication, this trench is refilled with oxide, chemical-mechanically polished, and sealed with a nitride cap in order to embed the micromechanical devices below the surface of the planarized wafer. The feasibility of this technique in a manufacturing environment has been demonstrated by combining a variety of embedded micromechanical structures with a 2 /spl mu/m CMOS process on 6 inch wafers. A yield of 78% has been achieved on the first devices manufactured using this technique.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"211\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 211

摘要

一种灵活的、模块化的制造工艺集成了微机械和微电子器件。该工艺将微机械器件嵌入晶圆片表面下的各向异性蚀刻沟槽中。在微电子器件制造之前,为了将微机械器件嵌入到平面化晶圆片表面之下,该沟槽被重新填充氧化物,化学机械抛光,并用氮化帽密封。通过将各种嵌入式微机械结构与6英寸晶圆上的2 /spl μ m CMOS工艺相结合,证明了该技术在制造环境中的可行性。在使用该技术制造的第一批器件上,产率达到78%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Embedded micromechanical devices for the monolithic integration of MEMS with CMOS
A flexible, modular manufacturing process for integrating micromechanical and microelectronic devices has been developed. This process embeds the micromechanical devices in an anisotropically etched trench below the surface of the wafer. Prior to microelectronic device fabrication, this trench is refilled with oxide, chemical-mechanically polished, and sealed with a nitride cap in order to embed the micromechanical devices below the surface of the planarized wafer. The feasibility of this technique in a manufacturing environment has been demonstrated by combining a variety of embedded micromechanical structures with a 2 /spl mu/m CMOS process on 6 inch wafers. A yield of 78% has been achieved on the first devices manufactured using this technique.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信