低温Cu/In键合用于3D集成

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947413

I. Panchenko, Steffen Bickel, Jörg Meyer, Maik Müller, J. Wolf

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引用次数: 1

摘要

本研究代表了基于固液互扩散(slip)原理的Cu/In键合三维集成的结果。在170℃的键合温度下成功制备了细间距互连。本文详细描述了铜和铜/铟金属间化合物(IMCs)的最终微观结构。研究了等温贮藏对合金微观组织发育的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low temperature Cu/In bonding for 3D integration

This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 °C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure development is investigated as well.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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