叠模器件中电阻性短路的案例研究

Ke-Ying Lin, Yu Chi Wang
{"title":"叠模器件中电阻性短路的案例研究","authors":"Ke-Ying Lin, Yu Chi Wang","doi":"10.1109/IPFA.2018.8452603","DOIUrl":null,"url":null,"abstract":"A resistive short IV curve was detected in a stacked-die device after a highly accelerated stress test (HAST). Lock-in thermography (LIT), a non-destructive fault isolation technique, was applied to localize the fault location in the top die of the intact package. Thereafter, backside sample preparation and physical failure analysis (PFA) were performed and revealed the die crack issue causing the fault.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Case Study of a Resistive Short in a Stacked-Die Device\",\"authors\":\"Ke-Ying Lin, Yu Chi Wang\",\"doi\":\"10.1109/IPFA.2018.8452603\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A resistive short IV curve was detected in a stacked-die device after a highly accelerated stress test (HAST). Lock-in thermography (LIT), a non-destructive fault isolation technique, was applied to localize the fault location in the top die of the intact package. Thereafter, backside sample preparation and physical failure analysis (PFA) were performed and revealed the die crack issue causing the fault.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452603\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452603","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

在高加速应力测试(HAST)后,在堆叠芯片器件中检测到电阻性短IV曲线。采用非破坏性故障隔离技术——锁定热成像技术(LIT)对完整封装的上模进行故障定位。随后,进行了背面样品制备和物理失效分析(PFA),揭示了导致故障的模具裂纹问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Case Study of a Resistive Short in a Stacked-Die Device
A resistive short IV curve was detected in a stacked-die device after a highly accelerated stress test (HAST). Lock-in thermography (LIT), a non-destructive fault isolation technique, was applied to localize the fault location in the top die of the intact package. Thereafter, backside sample preparation and physical failure analysis (PFA) were performed and revealed the die crack issue causing the fault.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信