SiGe HBTs温度相关热阻的可扩展模型

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798137

A. Sahoo, S. Frégonèse, M. Weiss, C. Maneux, T. Zimmer

{"title":"SiGe HBTs温度相关热阻的可扩展模型","authors":"A. Sahoo, S. Frégonèse, M. Weiss, C. Maneux, T. Zimmer","doi":"10.1109/BCTM.2013.6798137","DOIUrl":null,"url":null,"abstract":"This paper presents a geometry scalable approach for temperature dependent thermal resistance (RTH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (Pdiss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (Tamb), Pdiss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A scalable model for temperature dependent thermal resistance of SiGe HBTs\",\"authors\":\"A. Sahoo, S. Frégonèse, M. Weiss, C. Maneux, T. Zimmer\",\"doi\":\"10.1109/BCTM.2013.6798137\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a geometry scalable approach for temperature dependent thermal resistance (RTH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (Pdiss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (Tamb), Pdiss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798137\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798137","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

本文提出了一种计算沟槽隔离SiGe异质结双极晶体管(HBTs)温度相关热阻(RTH)的几何可扩展方法。该模型能够预测任意温度和功耗(Pdiss)下的RTH。根据温度梯度，将热流区域离散成n个基本片，得到了热流与温度的关系。每个切片的rth使用温度相关导热系数计算。结果与3D热TCAD模拟进行了比较，适用于大范围的环境温度(Tamb)、Pdiss和器件尺寸。最后，通过几种晶体管几何形状以及两种不同技术的测量验证了可扩展性，并发现它们非常一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A scalable model for temperature dependent thermal resistance of SiGe HBTs

This paper presents a geometry scalable approach for temperature dependent thermal resistance (RTH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (Pdiss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (Tamb), Pdiss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

自引率

0.00%

发文量