硅化镍自发形成的生物传感器金属衬垫失效现象

18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2011-07-04 DOI:10.1109/IPFA.2011.5992763

B. Lee, J. Oh, S. Lee

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引用次数: 0

摘要

采用半导体工艺制备了一种用于疾病早期诊断的场效应晶体管(FET)生物传感器芯片。焊盘金属沉积过程中出现了焊盘失效现象。进行了电气I-V性能和横断面TEM检查，以找出故障的根本原因。发现Ni UBM (Under Bump Metal)与Si衬底之间有硅化镍生长。结果表明，金属衬垫失效的根本原因是Ni衬垫与顶部Si层之间的界面自发硅化镍反应。

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Metal pad failure phenomena of biosensor due to spontaneous nickel silicide formation

A FET (Field Effect Transistor) biosensor chip for an early diagnosis of disease was fabricated using semiconductor process. Metal pad failure phenomena were found after pad metal deposition process. The electrical I-V performance and cross-sectional TEM inspection were done to find out the root cause of this failure. The nickel silicide growth between Ni UBM (Under Bump Metal) and Si substrate was found. The root cause of this metal pad failure was proved to be the interfacial spontaneous nickel silicide reaction between Ni pad and top Si layers.

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18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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