90nm SiGe HBTs的互热阻和自热阻研究

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798134

V. Jain, B. Zetterlund, P. Cheng, R. Camillo-Castillo, J. Pekarik, J. Adkisson, Qizhi Z. Liu, P. Gray, V. Kaushal, T. Kessler, D. Harame

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引用次数: 9

摘要

本文研究了在单90nm SiGe异质结双极晶体管(HBT)附近存在功率耗散元件时，互热耦合对其性能的影响。互热电阻(Rth，互热)已被计算为单个HBT和围绕器件的HBT环之间间距的函数。本文探讨了HBT结构设计的变化，包括器件布局方案、与发射极相连的金属线堆、深沟槽(DT)深度和发射极与DT间距，以降低自热阻(Rth)。本文还报道了一个更新的热阻模型，该模型考虑了通过与发射器相连的金属线堆的热流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of mutual and self-thermal resistance in 90nm SiGe HBTs

Impact of mutual thermal coupling on the performance of a single 90nm SiGe heterojunction bipolar transistor (HBT) due to the presence of power dissipating elements like other HBTs in near vicinity is presented in this paper. Mutual thermal resistance (Rth,mutual) has been computed as a function of spacing between the single HBT and a ring of HBTs surrounding the device. HBT structural design variations including device layout schemes, metal wire stack connected to the emitter, deep trench (DT) depth and emitter to DT spacing, for reduced self thermal resistance (Rth), have been explored in this paper. An updated thermal resistance model accounting for the heat flow through the metal wiring stack connected to the emitter is also reported.

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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