模流仿真在电子封装中的应用

K. Chai, V. Liu, Y. Wang, T. Her
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引用次数: 7

摘要

CAE在集成电路封装模具流程中的应用已经发展了多年。然而,由于其固有的局限性,在传递成型过程中准确预测IC封装中的EMC流动行为仍然是一个巨大的挑战。本文发展了用于半导体封装过程中模具流程分析的建模技术。引线框将整个成型腔分隔为上腔和下腔。型腔厚度是影响模具流动性能的最重要因素。由于顶腔和底腔厚度差大,流动不平衡,导致空气困住和模垫倾斜。一些厚度差较大的封装,如厚度比为1比3的TSOP、LOC-TSOP、DHS、EDHS和DPH q系列封装,在成型过程中存在严重的熔前不平衡。通过对短距试样流动现象的观察,发现空腔厚度、焊线密度、引线框开口尺寸和表面粗糙度都影响电磁兼容流动行为。将这些因素考虑到仿真模型的构建中,数值结果与实际实验结果吻合良好。对熔锋的数值计算结果和实验结果进行了比较和说明。研究了进一步提高包装成型性能的方法。通过使用CAE软件,可以方便地检测成型缺陷,有效地改进成型性问题,从而降低制造成本和设计周期。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The application of mold flow simulation in electronic package
The application of CAE in mold flow of IC packaging has been developed for years. However, to predict EMC flow behavior accurately in IC packages during transfer molding is still a huge challenge due to its intrinsic limitations. In this paper, modeling technologies to analyze mold flow during semiconductor encapsulation have been developed. The leadframe separates the whole molding cavity into top and bottom cavities. Cavity thickness is the most important factor to the mold flow behavior. Unbalanced flow, due to large thickness difference between top and bottom cavities, causes air trapping and die pad tilt. Some packages which have larger thickness difference, such as 1 to 3 thickness-ratio TSOP, LOC-TSOP, DHS, EDHS and DPH Q-series packages, have a seriously unbalanced melt-front during molding. By observing the flow phenomenon from short-shot samples, it is found that the cavity thickness, bonding wire density, the size of leadframe openings, and surface roughness all affect EMC flow behavior. By considering these factors into the construction of a simulation model, numerical results show excellent agreement with actual experimental results for a DPH-LQFP package. The melt-fronts of numerical and experimental results are compared and shown. Further investigation to improve the package moldability was also studied. By using CAE software, molding defects can be easily detected and moldability problems can be improved efficiently to reduce manufacturing cost and design cycle time.
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