利用蒙特卡罗器件模拟器分析高k介电介质的栅极电流[MOSFET应用]

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233639

Y. Ohkura, C. Suzuki, H. Amakawa, K. Nishi

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引用次数: 8

摘要

通过蒙特卡罗模拟器计算了通过高k介电体的栅极电流。在高k介电介质中，来自漏极边的栅极电流占主导地位，并且由于介电常数的增加导致势垒高度的降低而相当严重。高k介电膜和氧化物膜的叠层结构可以有效地抑制在漏极边缘附近产生的高能载流子产生的栅电流密度。

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Analysis of gate currents through high-k dielectrics using a Monte Carlo device simulator [MOSFET applications]

The gate current through high-k dielectrics has been calculated by a Monte Carlo simulator. In high-k dielectrics, the gate current from the drain edge is dominant and is quite serious due to a lowering of the barrier height with an increasing dielectric constant. The stack structure of high-k dielectric and oxide films is effective to suppress gate current densities generated from high-energy carriers generated near the drain edge.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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