{"title":"低温SDB与界面行为","authors":"J. Jiao, D. Lu, B. Xiong, Weiyuan Wang","doi":"10.1109/MEMSYS.1995.472564","DOIUrl":null,"url":null,"abstract":"In this paper, the realization and quality evaluation of low temperature silicon direct bonding(LTSDB) have been described. Through HREM and SIMS methods, the bonding interface characteristics were investigated. The interface structure, such as dislocations and randomly distribution of Si02, were observed in HREM images. The SIhlS results showed the distribution near the bonding interface and other properties of Si-H atomic groups. We proposed a new two-step LTSDB mechanism.","PeriodicalId":273283,"journal":{"name":"Proceedings IEEE Micro Electro Mechanical Systems. 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low temperature SDB and interface behaviours\",\"authors\":\"J. Jiao, D. Lu, B. Xiong, Weiyuan Wang\",\"doi\":\"10.1109/MEMSYS.1995.472564\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the realization and quality evaluation of low temperature silicon direct bonding(LTSDB) have been described. Through HREM and SIMS methods, the bonding interface characteristics were investigated. The interface structure, such as dislocations and randomly distribution of Si02, were observed in HREM images. The SIhlS results showed the distribution near the bonding interface and other properties of Si-H atomic groups. We proposed a new two-step LTSDB mechanism.\",\"PeriodicalId\":273283,\"journal\":{\"name\":\"Proceedings IEEE Micro Electro Mechanical Systems. 1995\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-01-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Micro Electro Mechanical Systems. 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1995.472564\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Micro Electro Mechanical Systems. 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1995.472564","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, the realization and quality evaluation of low temperature silicon direct bonding(LTSDB) have been described. Through HREM and SIMS methods, the bonding interface characteristics were investigated. The interface structure, such as dislocations and randomly distribution of Si02, were observed in HREM images. The SIhlS results showed the distribution near the bonding interface and other properties of Si-H atomic groups. We proposed a new two-step LTSDB mechanism.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
