迁移率随载流子密度幂律依赖的场效应器件的阈值电压提取方法

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106121

V. Mosser, David Seron, Y. Haddab

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引用次数: 4

摘要

提出了一种适用于二维场效应晶体管阈值电压提取的新方法。它可以应用于各种类型的器件，其中迁移率与载流子浓度μ∝nSα呈幂律依赖关系。结果与接触电阻无关。该方法提供了一个物理上合理的值:VG-VT与通道载流子密度成正比，与配套门控霍尔器件中与vg相关的霍尔测量结果相检验。

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Threshold voltage extraction method in field-effect devices with power-law dependence of mobility on carrier density

We propose a new method suited for the extraction of the threshold voltage in 2D Field-Effect-Transistors. It can be applied to various classes of devices where the mobility exhibits a power-law dependence on carrier concentration, μ ∝ n_S^α. The result doesn't depend on contact resistance. The method provides a physically sound value: V_G-V_T is proportional to the channel carrier density as checked with V_G-dependent Hall measurements in companion gated Hall devices.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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