采用SiGe技术的双平衡81-86GHz EBAND有源下变频混频器

B. Sheinman, R. Carmon, R. Ben-Yishay, O. Katz, N. Mazor, Run Levinger, D. Elad, A. Golberg, A. Bruetbart
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引用次数: 5

摘要

采用IBM 0.12μm SiGe技术,设计并制作了一款适用于81 ~ 86ghz E-BAND频率范围的RF - IF下变频混频器。混频器由双平衡吉尔伯特单元组成,其中射频信号通过一个恒平衡驱动进入公共基极放大混频器级。该混频器的转换增益为7dB, SSB噪声系数为12dB,输入压缩系数为-10dBm。混频器的低噪声系数和高转换增益使得在混频器和LNA之间增加一个高度线性的模拟控制衰减器,从而进一步提高接收链的线性度,而不会降低噪声性能。混频器面积为0.4mm2, 2.7V电源消耗110mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A double balanced 81–86GHz EBAND active down conversion mixer in SiGe technology
An RF to IF down-conversion mixer for the upper 81-86GHz E-BAND frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell in which the RF signal is driven through a marchand balun into the common base amplifying mixer stage. The mixer exhibits conversion gain of 7dB, SSB noise figure of 12dB and input compression I1dBCP of -10dBm. The low noise figure and high conversion gain of the mixer enables the addition of a highly linear analog controlled attenuator between the mixer and LNA to further improve the linearity of the receiver chain without degrading the noise performance. The mixer area is 0.4mm2 and it consumes 110mW from a 2.7V power supply.
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