采用SOI技术的集成辐射图像传感器

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641403

Y. Arai, T. Miyoshi, R. Ichimiya, K. Hara, Y. Onuki

{"title":"采用SOI技术的集成辐射图像传感器","authors":"Y. Arai, T. Miyoshi, R. Ichimiya, K. Hara, Y. Onuki","doi":"10.1109/SOI.2010.5641403","DOIUrl":null,"url":null,"abstract":"We have developed monolithic radiation detectors based on a 0.2 µm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technology. It has both a thick, high-resistivity sensor layer and a thin LSI circuit layer in a single chip. To shield the electronics part from the sensor region, we have created a buried well region under the buried oxide (BOX) layer of the SOI wafer. Two type of detectors, integration and counting types, are being developed.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integrated radiation image sensors with SOI technology\",\"authors\":\"Y. Arai, T. Miyoshi, R. Ichimiya, K. Hara, Y. Onuki\",\"doi\":\"10.1109/SOI.2010.5641403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed monolithic radiation detectors based on a 0.2 µm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technology. It has both a thick, high-resistivity sensor layer and a thin LSI circuit layer in a single chip. To shield the electronics part from the sensor region, we have created a buried well region under the buried oxide (BOX) layer of the SOI wafer. Two type of detectors, integration and counting types, are being developed.\",\"PeriodicalId\":227302,\"journal\":{\"name\":\"2010 IEEE International SOI Conference (SOI)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2010.5641403\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们开发了基于0.2µm完全耗尽绝缘体上硅(FD-SOI) CMOS技术的单片辐射探测器。它在单个芯片中具有厚的高电阻率传感器层和薄的LSI电路层。为了保护电子部件免受传感器区域的影响，我们在SOI晶圆的埋藏氧化物(BOX)层下创建了一个埋藏井区域。两种类型的探测器，集成型和计数型，正在开发中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Integrated radiation image sensors with SOI technology

We have developed monolithic radiation detectors based on a 0.2 µm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS technology. It has both a thick, high-resistivity sensor layer and a thin LSI circuit layer in a single chip. To shield the electronics part from the sensor region, we have created a buried well region under the buried oxide (BOX) layer of the SOI wafer. Two type of detectors, integration and counting types, are being developed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量