模式敏感错误的透明内存测试

M. Karpovsky, V. Yarmolik
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引用次数: 30

摘要

本文提出了一种基于PS(n, k)故障模型(k out of n模式敏感故障模型)的RAM测试方法。根据该模型,属于n位存储块的任何存储单元的内容,或改变内容的能力,受到该块中任何k-1个单元的内容的影响。本文研究了基于透明伪穷极测试及其近似伪随机循环测试的内存测试方法,该方法可用于周期性和制造性测试,并且比标准方法需要更低的硬件和时间开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transparent memory testing for pattern sensitive faults
This paper presents a new methodology for RAM testing based on PS(n, k) fault model (the k out of n pattern sensitive fault model). According to the model the contents of any memory cell which belongs to an n-bit memory block, or ability to change the contents, is influenced by the contents of any k-1 cells from this block. This paper includes the investigation of memory testing approaches based on the transparent pseudoexhaustive testing and its approximations by pseudorandom circular tests, which can be used for periodic and manufacturing testing and require lower hardware and time overheads than the standard approaches.
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