{"title":"采用硅片键合技术制造的高速绝缘栅双极晶体管","authors":"S. Tu, G. Tam, P. Tam, A. Taomoto","doi":"10.1109/BIPOL.1995.493899","DOIUrl":null,"url":null,"abstract":"A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding\",\"authors\":\"S. Tu, G. Tam, P. Tam, A. Taomoto\",\"doi\":\"10.1109/BIPOL.1995.493899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493899\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493899","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding
A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm/sup 2/ and a turn-off fall time less than 100 nanoseconds are achieved.
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