低成本硅中间体(LC-TSI)高性能集成无源器件

Cheng Jin, Boyu Zheng, L. Ding, Rui Li, K. Chang
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引用次数: 2

摘要

本文介绍了利用硅中间体(LC-TSI)设计、制造和表征低成本集成无源器件(ipd)的方法。本文介绍并分析了对称螺旋电感的性能。研究了走线间距和走线宽度对q因子的影响。此外,还讨论了周围和下面有TSV的电感。在TSI平台上,还设计了一些射频(RF) ipd,包括用于汽车雷达应用的77 GHz毫米波(mmWave)天线。在TSI平台上设计了基于四分之一模衬底集成波导(QMSIW)的带通滤波器。给出了这些结构的性能,结果表明,TSI平台作为设计高频ipd和RF-IPD的载体是一种有吸引力和有前途的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance integrated passive devices (ipds) on low cost through silicon interposer (LC-TSI)
This paper presents the design, fabrication and characterization of integrated passive devices (IPDs) on low cost through silicon interposer (LC-TSI). The performance of symmetrical spiral inductors is presented and analyzed in this paper. The effect of space between traces and the width of the trace on the Q-factor are studied. In addition, the inductors with TSV around and under are also discussed. On the TSI platform, some radio-frequency (RF) IPDs are also designed, including a millimeter-wave (mmWave) antenna working at 77 GHz for the automotive radar application. A bandpass filter based on the quarter-mode substrate integrated waveguide (QMSIW) is also designed on the TSI platform. The performance of these structures is given and the results show that the TSI platform is an attractive and promising method as a carrier to design IPDs and RF-IPD working at high frequency.
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