利用深x射线光刻技术制造高纵横比的MEMS亚微米结构

Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308) Pub Date : 2000-01-23 DOI:10.1109/MEMSYS.2000.838585

H. Ueno, N. Nishi, S. Sugiyama

{"title":"利用深x射线光刻技术制造高纵横比的MEMS亚微米结构","authors":"H. Ueno, N. Nishi, S. Sugiyama","doi":"10.1109/MEMSYS.2000.838585","DOIUrl":null,"url":null,"abstract":"In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fabrication of sub-micron structures with high aspect ratio for MEMS using deep X-ray lithography\",\"authors\":\"H. Ueno, N. Nishi, S. Sugiyama\",\"doi\":\"10.1109/MEMSYS.2000.838585\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.\",\"PeriodicalId\":251857,\"journal\":{\"name\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2000.838585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2000.838585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

本文介绍了利用深x射线光刻技术制造实用高性能微机电系统(MEMS)的高纵横比亚微米结构。制造亚微米宽度和间隙(线和空间)的微结构是实用和高性能MEMS的必要条件。为了制备亚微米微结构，研究了亚微米深x射线光刻技术。采用深x射线光刻技术制备了最小宽度为0.2 /spl mu/m、长度为6 /spl mu/m、高度为17 /spl mu/m的亚微米PMMA结构。

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Fabrication of sub-micron structures with high aspect ratio for MEMS using deep X-ray lithography

In this paper, we present the fabrication of sub-micron structures with high aspect ratio for practical and high performance microelectromechanical systems (MEMS) using deep X-ray lithography. It is necessary for practical and high performance MEMS to be fabricated microstructures with sub-micron widths and gaps (lines and spaces). In order to fabricate the sub-micron microstructures, sub-micron deep X-ray lithography has been investigated. As a result, a sub-micron PMMA structure with 0.2 /spl mu/m minimum width, 6 /spl mu/m length and 17 /spl mu/m height was fabricated by deep X-ray lithography using an X-ray mask with thick X-ray absorbers having sub-micron width.

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Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)

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