低温下Si和SiGe双极晶体管非平衡基底输运的证据

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493860

D. M. Richey, A. Joseph, J. Cressler, R. Jaeger

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引用次数: 3

摘要

通过计算先进Si和SiGe双极器件中中性基区的非平衡载流子输运，可以解释在低温下测量到的集电极电流和跨导与标准漂移扩散理论预测的差异。

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Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures

Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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