Jonggi Kim, I. Mok, Sunghoon Lee, Kyumin Lee, H. Sohn
{"title":"Ti电极HfO2薄膜的复位优先电阻开关机理","authors":"Jonggi Kim, I. Mok, Sunghoon Lee, Kyumin Lee, H. Sohn","doi":"10.1109/IITC.2012.6251589","DOIUrl":null,"url":null,"abstract":"RESET-first resistive switching mechanism in HfO<sub>2-x</sub> with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO<sub>2</sub> film. The redox phenomenon from Ti/HfO<sub>2</sub> to TiO<sub>x</sub>/HfO<sub>2-x</sub> was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO<sub>2</sub> to TiOx/HfO<sub>2-x</sub> was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode\",\"authors\":\"Jonggi Kim, I. Mok, Sunghoon Lee, Kyumin Lee, H. Sohn\",\"doi\":\"10.1109/IITC.2012.6251589\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RESET-first resistive switching mechanism in HfO<sub>2-x</sub> with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO<sub>2</sub> film. The redox phenomenon from Ti/HfO<sub>2</sub> to TiO<sub>x</sub>/HfO<sub>2-x</sub> was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO<sub>2</sub> to TiOx/HfO<sub>2-x</sub> was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251589\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251589","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode
RESET-first resistive switching mechanism in HfO2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO2 film. The redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.
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