C. Tsai, C. Yang, C. Hsu, C. M. Lai, K. Y. Lo, C. G. Chen, R. Huang, C. T. Tsai, L. Hung, J. You, W. Hung, T. F. Chen, O. Cheng, J. Y. Wu, S. F. Tzou, C. Liang, I. Chen
{"title":"提高28nm HK/MG CMOS技术可靠性的HfZrOx栅堆工程特点","authors":"C. Tsai, C. Yang, C. Hsu, C. M. Lai, K. Y. Lo, C. G. Chen, R. Huang, C. T. Tsai, L. Hung, J. You, W. Hung, T. F. Chen, O. Cheng, J. Y. Wu, S. F. Tzou, C. Liang, I. Chen","doi":"10.1109/VLSI-TSA.2012.6210162","DOIUrl":null,"url":null,"abstract":"High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrOx gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology\",\"authors\":\"C. Tsai, C. Yang, C. Hsu, C. M. Lai, K. Y. Lo, C. G. Chen, R. Huang, C. T. Tsai, L. Hung, J. You, W. Hung, T. F. Chen, O. Cheng, J. Y. Wu, S. F. Tzou, C. Liang, I. Chen\",\"doi\":\"10.1109/VLSI-TSA.2012.6210162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrOx gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210162\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology
High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrOx gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.
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