栅极材料和应力电压对高k介电材料击穿后漏电流的影响

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493178

R. Duschl, M. Kerber, U. Schroeder, T. Hecht, S. Jakschik, C. Kapteyn, S. Kudelka

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引用次数: 2

摘要

研究了Al/sub - 2/O/sub - 3/介质的击穿行为与电极材料、应力电压和厚度的关系。与文献中普遍报道的不同，即使在金属电极上也发现了两个稳定的双相，这归因于硬双相形成的阈值能量有限。这导致在产品操作条件下限制后BD电流，因此开辟了目标松弛的可能性。

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Influence of gate material and stress voltage on post breakdown leakage current of high k dielectrics

The breakdown (BD) behaviour of Al/sub 2/O/sub 3/ dielectrics is investigated as a function of electrode material, stress voltage and thickness. Other than generally reported in the literature, two stable BD phases were found, even for metal electrodes, which is attributed to finite threshold energy for hard BD formation. This results in a limitation of the post BD current at product operation conditions and therefore opens up possibilities for target relaxation.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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