{"title":"一种新的栅极电荷测量方法","authors":"A. Mikata, H. Kakitani, R. Takeda, Alan Wadsworth","doi":"10.1109/ICMTS.2015.7106124","DOIUrl":null,"url":null,"abstract":"The drive for ever-increasing power circuit efficiencies ensures that the measurement of gate charge (Qg) will continue to grow in importance. In this paper, we explain a new Qg measurement method that solves many conventional Qg measurement issues. The outlined method supplies the same Qg curve obtained by traditional one-pass high-power measurement techniques using a new method that combines two Qg curves measured under lower power conditions.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel new gate charge measurement method\",\"authors\":\"A. Mikata, H. Kakitani, R. Takeda, Alan Wadsworth\",\"doi\":\"10.1109/ICMTS.2015.7106124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The drive for ever-increasing power circuit efficiencies ensures that the measurement of gate charge (Qg) will continue to grow in importance. In this paper, we explain a new Qg measurement method that solves many conventional Qg measurement issues. The outlined method supplies the same Qg curve obtained by traditional one-pass high-power measurement techniques using a new method that combines two Qg curves measured under lower power conditions.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The drive for ever-increasing power circuit efficiencies ensures that the measurement of gate charge (Qg) will continue to grow in importance. In this paper, we explain a new Qg measurement method that solves many conventional Qg measurement issues. The outlined method supplies the same Qg curve obtained by traditional one-pass high-power measurement techniques using a new method that combines two Qg curves measured under lower power conditions.